unisonic technologies co., ltd 2SC2073 preliminary npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r221-021.a npn silicon power transistors ? description the utc 2SC2073 is an npn silicon power transistors, it uses utc?s advanced technology to provide customers with high collector base voltage, etc. the utc 2SC2073 is suitable for general purpose power amplifier, vertical output application. ? features * high collector base voltage ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2SC2073l- ta3-t 2SC2073g-ta3-t to-220 b c e tube note: pin assignment: b: base c: collector e: emitter ? marking
2SC2073 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r221-021.a ? absolute maximum ratings parameter symbol ratings unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5.0 v collector current continuous i c 1.5 a peak i cm 3.0 a base current i b 0.5 a total power dissipation @ t c =25c p d 25 w derate above 25c 0.2 w/c junction temperature t j -55~+150 c storage temperature t stg -55~+150 c notes: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction-to-case jc 5.0 c/w ? electrical characteristics (t c =25c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics collector-base breakdown voltage bv cbo i c =1.0ma, i b =0 150 v collector-emitter breakdown voltage bv ceo i c =5.0ma, i b =0 150 v emitter-base breakdown voltage bv ebo i b =1.0ma, i c =0 5.0 v collector cut-off current i cbo v cb =120v, i e =0 10 a emitter cut-off current i ebo v eb =5.0v, i c =0 10 a on characteristics (note 1) dc current gain h fe v ce =10v, i c =0.5a 40 140 collector-emitter satu ration voltage v ce ( sat ) i c =0.5a, i b =50ma 1.5 v base-emitter on voltage v be ( on ) i c =500ma, v ce =10v 0.65 0.85 v dynamic characteristics current-gain -bandwidth product f t i c =0.5a,v ce =10v, f=1.0mhz 4.0 mhz notes: pulse test: pulse width=300 s, duty cycle 2.0%.
2SC2073 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r221-021.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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